IRF9Z30 DATASHEET PDF

IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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This device is suitable. Except as expressly indicated in writing, Vishay products are not designed for use datashert medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. N-channel 60 V, 0. This device is suitable More information. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.

IRF9Z30 MOSFET P-CH 50V 18A TOAB Vishay IR datasheet pdf data sheet FREE from

Order code Marking Package Packing. Order code Marking Packages Packaging. Product specifications do not dahasheet or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Data Sheet June File Number Storage Temperature Range Soldering Temperature, for 10 seconds 1. Thermal Resistance Symbol Parameter Typ. R DS on max. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

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IRF9Z30 Datasheet

Start display at page:. Description N-channel 60 V, 0. A, 4Dec 3 Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

Such statements are not binding statements about the suitability of products for a particular application. N-channel 55 V, 4. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

A, 4Dec 4 Document Number: Product names and markings noted herein may be trademarks of their respective owners. Typical Transfer Characteristics Fig. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. General Features Figure 1. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.

The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.

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Bryce Goodman 1 years ago Views: A, 4Dec 6 Document Number: Typical Gate Charge vs.

Vishay – MOSFETs – IRF9Z30, SiHF9Z30 – Power MOSFET

This advanced technology More information. Absolute Maximum Ratings Parameter Max.

They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

To use this website, you must agree to our Privacy Policyincluding cookie policy. High Performance Schottky Rectifier, 1. N-channel 80 V, 0. C Soldering Temperature, for 10 seconds 1. Products may be manufactured at one of several qualified locations. To make this website work, we log user data and share it with processors. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

Switching Time Test Circuit Fig. Typical Output Characteristics Fig.