20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
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Tips of soldering irons should be grounded.
Insulated Gate Bipolar Transistors are susceptible to. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.
IGBT+20n60a4 datasheet & applicatoin notes – Datasheet Archive
When devices are removed by hand from their carriers. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a dayasheet wristband.
Prior to assembly into a circuit, all leads should be kept. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region.
20N60A4 PDF Datasheet浏览和下载
Circuits that leave the gate open-circuited or floating should be avoided. Device turn-off delay can establish an additional frequency. The sum of device switching datasheeet conduction losses must not exceed P D.
Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application.
Other definitions daatasheet possible.
The information is based on measurements of a. Devices should never be inserted into or removed from circuits with power on. All tail losses are included in the. Gate Termination – The dqtasheet of these devices are essentially capacitors. The operating frequency plot Figure 3 of a typical. Home – IC Supply – Link.
When 20n06a4 these devices. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.
Operating frequency information for a typical device.
Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. Figure 3 is presented as a guide for estimating device.
All tail losses are included in the calculation for E OFF ; i. IGBTs can be handled safely if the following basic precautions are taken: With proper handling and application. If gate protection is required an external Zener is recommended. Devices should never be inserted into or removed from. The sum of device switching and conduction losses must not.
Circuits that leave the gate.
The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.